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Poster RSE 15010111

Cu2MnSnS4: An alternative chalcogenide to push the PV on TW-Scale


° Congresso nazionale del gruppo interdivisional ENERCHEM 18-20 , Febbraio-2016.

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S. Marchionna (RSE SpA) , F. Cernuschi (RSE SpA) , A. Le Donne (Università Bicocca Milano), S. Binetti (Università Bicocca Milano), M. Acciarri (Università Bicocca Milano), M. Merlini (Università di Milano)

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The main parameters for the growth of Cu2MnSnS4 (CMTS) thin film via a two-step process has been studied and optimized. This chalcogenide shows optimal chemical and physical properties to be used in thin film solar cell in order to push the PV on TW scale.

An attractive possibility for the synthesis of In (≈ 0.049ppm) and Se (≈ 0.05 ppm) free chalcogenides which may allow terawatt range photovoltaic (PV) applications relies on Cu2-II-IV-S4 species, such as copper zinc tin sulfide (Cu2ZnSnS4 (CZTS)). CZTS shares similar structure with the first developed chalcopyrite matrix (i.e. CuInS2): half of the In atoms is replaced with Zn and another half with Sn, resulting in the kesterite phase. A further alternative belonging to this class of materials is Cu2MnSnS4 (CMTS), which consists of abundant (Mn = 950 ppm) and non-toxic elements and shows high absorption coefficient and direct band gap suitable for PV applications.

In this work, a two-step process (evaporation in vacuum of the metal precursors followed by annealing in Sulfur vapors) has been implemented to grow CMTS thin films (TFs) on Mo-coated soda lime glasses. The effects of the most critical growth parameters on TFs quality (homogeneity and stoichiometry) have been investigated, paying particular attention to the order of the metal precursors in the evaporated stack and to the annealing sequence.

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